The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 28, 1991

Filed:

Mar. 15, 1990
Applicant:
Inventor:

Te-Long Chiu, San Jose, CA (US);

Assignee:

Other;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 235 ; 365185 ; 437 43 ; 437 44 ;
Abstract

The flash EEPROM memory device with the floating gate that is over the channel area and insulated from the channel by 200 to 1000 A of gate oxide, and that is also over the thin tunnel dielectric area at the source and insulated from the source by 70 A to 200 A of tunnel dielectric. Another improvement of the proposed version of the flash EEPROM memory device is that the tunnel dielectric area is small and self aligned to the floating gate.


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