The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 28, 1991
Filed:
Mar. 15, 1990
Applicant:
Inventor:
Kenji Hosogi, Itami, JP;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 22 ; 357 15 ; 357 65 ; 357 71 ;
Abstract
A field effect transistor for microwave and millimeter wave frequencies includes a plurality of feeding points on a gate finger extending on a substrate, an airbridge wiring structure which connects adjacent feeding points with each other, and a gate pad beyond the source and drain electrodes connected with the gate finger through the airbridge. The relatively wide gate connection reduces gate resistance. The gate connection does not cross the source and drain electrodes, reducing capacitance. The reduced resistance and capacitance significantly improve the high frequency noise figure.