The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 28, 1991
Filed:
May. 02, 1989
Applicant:
Inventor:
Kanetake Takasaki, Tokyo, JP;
Assignee:
Fujitsu Limited, Kawasaki, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437132 ; 148D / ; 148D / ; 148D / ; 148D / ; 156613 ; 437 81 ; 437108 ; 437126 ; 437973 ; 437976 ;
Abstract
A heteroepitaxial growth method wherein a III-V group compound semiconductor is formed on a silicon substrate. A first amorphous III-V group compound semiconductor layer is formed on the silicon substrate before forming a III-V group compound semiconductor crystal layer on the amorphous III-V group compound semiconductor layer. A second amorphous III-V group semiconductor layer having a thickness greater than the crystal layer is formed on the III-V group compound semiconductor crystal layer and subjected to a solid phase epitaxial growth whereby the second amorphous III-V group compound semiconductor layer is made a single crystalline layer.