The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 28, 1991
Filed:
Feb. 28, 1989
Applicant:
Inventors:
Hideaki Tanaka, Tokyo, JP;
Shigeyuki Akiba, Tokyo, JP;
Masatoshi Suzuki, Tokyo, JP;
Katsuyuki Utaka, Musashino, JP;
Assignee:
Kokusai Denshin Denwa Kabushiki Kaisha, Tokyo, JP;
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 22 ; 437-5 ; 437129 ; 437130 ; 437155 ; 437247 ; 357 19 ; 148D / ;
Abstract
An optical semiconductor device manufacturing method is disclosed which involves an ion implantation step of implanting ions into a compound semiconductor wafer through an ion implantation mask and an annealing step of activating atoms in the compound semiconductor wafer through an annealing mask film. The ion implantation step and the annealing step are performed in succession after laminating mono- or multi-layered compound semiconductor layers as the ion implantation mask and the annealing mask film on the compound semiconductor wafer.