The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 28, 1991

Filed:

Jul. 18, 1990
Applicant:
Inventors:

John R Haavisto, Scituate, MA (US);

Edward P Ayers, Hingham, MA (US);

Assignee:

Northrop Corporation, Hawthorne, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G02B / ; H01L / ;
U.S. Cl.
CPC ...
350 9612 ; 350 9611 ; 350 9615 ; 350 9631 ; 350320 ; 437 21 ; 437 22 ; 437 51 ;
Abstract

A generally circular or elliptical waveguide (2) is fabricated within a substrate (3) such that the waveguide is surrounded by two different indices of refraction, with the index inside the waveguide ring being greater than the index outside the ring. This results, in combination with a varying index of refraction profile across the width of the waveguide inself, in a tendency to confine mode energy away from the outer perimeter of the waveguide ring where leakage is most likely to occur. As a result the asymmetrical index profile compensates for the curvature of the waveguide, wave phase front velocities are made uniform, and the mode energy remains confined within the waveguide. A two step ion exchange technique is disclosed for selectively increasing the index of refraction of the substrate and for forming the variable index of refraction profile within the waveguide.


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