The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 21, 1991
Filed:
Jun. 16, 1989
Toshio Yamada, Nishitama, JP;
Tohru Kobayashi, Iruma, JP;
Hirotaka Nishizawa, Akishima, JP;
Hiroyuki Itoh, Kodaira, JP;
Tatsuya Saitoh, Kokubunji, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
A MIS capacitor to be implemented in a semiconductor device employing various or predetermined circuits, has a dielectric side electrode which is in contact with a buried layer provided on a semiconductor substrate through a dielectric film and a buried layer-side electrode connected to the buried layer. The buried layer-side electrode of the MIS capacitor is connected to a low-impedance side of the circuit employed therewith. This structure, when connected as such, is capable of reducing the influence of noise attributed to an .alpha.-ray and thereby operating the circuit stably. The semiconductor device using a MIS capacitor invention is adaptable to an emitter follower circuit and various logic circuits for preventing malfunction resulting from .alpha.-ray radiation.