The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 21, 1991
Filed:
Mar. 08, 1990
Applicant:
Inventor:
Peter Roggwiller, Riedt-Neerach, CH;
Assignee:
Asea Brown Boveri Ltd., Baden, CH;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 38 ; 357 39 ;
Abstract
In the case of a high blocking-capacity semiconductor component with an anode structure, which provides between the n-type base layer (6) and the anode-side p-type emitter regions (8) an n-doped barrier layer (7), and between the p-type emitter regions (8) emitter short-circuits with short-circuit contact regions (9), by partitioning of the barrier layer (7) into local barrier-layer regions (7a,b) an easily adjustable and simultaneously increased short-circuit resistance (R.sub.s) in the short-circuit path is obtained.