The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 21, 1991

Filed:

Nov. 21, 1989
Applicant:
Inventor:

Shinro Oikawa, Tokyo, JP;

Assignee:

NEC Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03G / ;
U.S. Cl.
CPC ...
355262 ; 118660 ; 355256 ;
Abstract

An electrostatically charged image is applied to a smooth photoconductor surface and moved past a development station having an outer liquid chamber and an inner liquid chamber disposed therein. The outer and inner liquid chambers respectively communicate to outer and inner slits which are aligned with each other in a direction toward the photoconductor surface. In the slit of the inner housing is disposed a comb-like electrode which is biased at a potential opposite to the charged image. The comb elements of the electrode are successively arranged along an inner wall of the inner slit. Developing liquid is supplied to the inner chamber through an inlet port located below the inner slit so that the liquid overflows through the inner slit into the outer chamber while constantly wetting the outer slit to present a liquid surface to the electrostatically charged image. Baffle plates are secured to the inner walls of the inner chamber so that the developing liquid flows uniformly at all locations of the comb-like electrode toward the inner slit.


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