The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 21, 1991
Filed:
Dec. 07, 1989
Applicant:
Inventor:
Patrice Gamand, Yerres, FR;
Assignee:
U.S. Philips Corporation, New York, NY (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03F / ;
U.S. Cl.
CPC ...
330277 ; 330290 ; 330291 ; 330293 ;
Abstract
An integrated semiconductor arrangement comprising a high-frequency power amplifier stage, which comprises two field-effect transistor having first connection means to influence the output power by means fo the unit gate width of the amplifier stage, and second connection means to influence the value of the input capacitance of the amplifier stage. This stage also comprises means to ensure the feedback of direct current to ground and also includes D.C. biasing means.