The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 21, 1991
Filed:
Apr. 03, 1989
Hideyuki Miyazawa, Ohme, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
A method of fabricating semiconductor integrated circuit devices in which a wiring is connected, via a silicon film, to a semiconductor region which is the source region or the drain region of a MISFET. The method comprises a step for introducing impurities for forming a semiconductor region of the MISFET to shallowly form the semiconductor region, a step for forming a silicon film on the main surface of the semiconductor substrate in the region where the impurities are introduced, and a step for diffusing impurities into the semiconductor substrate and for diffusing impurities into a silicon film by the heat treatment so that the silicon film is permitted to possess electric conductivity.