The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 21, 1991
Filed:
Mar. 13, 1989
Applicant:
Inventor:
Naomichi Abe, Tokyo, JP;
Assignee:
Fujitsu Limited, Kanagawa, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03F / ; G03F / ;
U.S. Cl.
CPC ...
430325 ; 430176 ; 430330 ;
Abstract
A process for the formation of a negative resist pattern, comprising preparing a mixture consisting of water-soluble polymeric material having at least one hydroxyl group with a photoacid generator capable of releasing an acid upon radiation exposure, coating a solution of the resist material onto a substrate to form a resist layer, exposing layer to patterned radiation, heating the exposed resist layer in the presence of an acid as a catalyst to remove water, and developing resist layer with water to remove unexposed areas to form a resist pattern on the substrate.