The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 21, 1991
Filed:
Dec. 20, 1989
Hae S Park, Seoul, KR;
Sang I Kim, Seoul, KR;
Sea C Kim, Seoul, KR;
Kye S Park, Seoul, KR;
Jin G Park, Seoul, KR;
Hyundai Electronics Industries Co., Ltd., Ichon-Kuni, KR;
Abstract
A method for removing residual material which remains in a cavity after an anisotropic etching process in the manufacture of a partially completed multi-layer semiconductor device, where the cavity is in contact with at least one anisotropic etch-stop layer and is accessible by an etchable layer is disclosed. A plasma etching apparatus which includes a chamber is utilized. The etchable layer is first etched by anisotropic etching in the chamber under predetermined conditions in the plasma etching apparatus until a top of the etch-stop layer is exposed. A plasma scattering etching process is then performed to remove the residual material in the cavity by changing the predetermined conditions of the anisotropic etching process to produce plasma scattering, thereby removing the residual material from the cavity.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile