The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 14, 1991

Filed:

Jan. 18, 1990
Applicant:
Inventors:

Hiroaki Murakami, Tokyo, JP;

Osamu Matsumoto, Yokohama, JP;

Assignee:

Kabushiki Kaisha Toshiba, Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K / ;
U.S. Cl.
CPC ...
307530 ; 307451 ; 307481 ;
Abstract

A sense amplifier includes a first P channel MOS transistor connected between a power source terminal and a bit line, and a CMOS inverter for inverting the logic level of the potential in the bit line. The sense amplifier further includes a second N channel MOS transistor connected in series to the first P channel MOS transistor between the power source terminal and the bit line. The second N channel MOS transistor is switch-controlled by an output signal of a CMOS inverter. When in an off state, the second N channel MOS transistor prohibits the first P channel MOS transistor from transferring a power source potential to the bit line. When in an on state, the second N channel MOS transistor allows the first P channel MOS transistor to transfer the power source potential to the bit line.


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