The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 14, 1991
Filed:
Feb. 08, 1990
Applicant:
Inventors:
Assignee:
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 41 ; 437160 ; 437911 ; 148D / ; 148D / ;
Abstract
A GaAs JFET according to the present invention is formed as follows. First, an n type active layer is formed on a GaAs substrate. Then, a gate electrode containing a group II element is formed on the n type active layer. With the gate electrode being used as a mask, an n type impurity is ion-implanted in the GaAs substrate with a high concentration in a self-aligned fashion with respect to the gate electrode. Heat-treatment is then performed on the resultant structure to diffuse the group II element in the gate electrode into the n type active layer, forming a p type gate region. At the same time, the ion-implanted n type impurity is activated, forming source and drain regions.