The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 14, 1991
Filed:
May. 14, 1990
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
In order to eliminate unwanted crystal defects generated by an ion implantation, a semiconductor substrate or an epitaxial layer, which is selectively subjected to an impurity ion implantation, is heat-treated in an inert gas atmosphere at 850.degree. to 1050.degree. C. to recrystallize the implanted region. Thereafter, the semiconductor substrate is heat-treated at 900.degree. to 1250.degree. C. in an atmosphere containing oxygen. For eliminating abnormal growth of grain boundaries in a polycrystalline semiconductor layer deposited on an insulating film the semiconductor layer is heat-treated at 900.degree. to 1100.degree. C. in an atmosphere containing oxygen. By applying at least one of these processes to usual fabrication methods, semiconductor devices with high reliabilty such as power MOSFETs will be provided.