The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 07, 1991
Filed:
Sep. 28, 1989
Tatsuyuki Sanada, Yokohama, JP;
Tetsufumi Odagawa, Ebina, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
An optical bistable laser diode includes an elongated intrinsic active semiconductor element having upper and lower surfaces and a pair of spaced ends. A semiconductor clad layer is disposed on one of the surfaces of the semiconductor element and another semiconductor clad layer of a different conduction type is disposed on the other surface of the semiconductor element. One of the semiconductor layers is coextensive in length with the semiconductor element. The diode includes a mirror at each end of the semiconductor element presenting a resonator. The diode also includes first and second electrodes on the coextensive semiconductor layer. One electrode extends along the semiconductor layer from one end thereof for a distance L.sub.1. The other electrode extends along the semiconductor layer from the other end thereof for a distance L.sub.2. The electrodes are disposed in longitudinal alignment and the same are spaced apart a distance L.sub.3 presenting a gap therebetween defining a saturable absorption region in the active semiconductor layer. The distances L.sub.1, L.sub.2 and L.sub.3 are such that the same satisfy the relationship