The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 07, 1991
Filed:
Jul. 21, 1989
Tetsuro Kumesawa, Kanagawa, JP;
Yasuo Kanou, Tokyo, JP;
Osamu Nishima, Tokyo, JP;
Masaaki Isobe, Kanagawa, JP;
Hiromichi Matsui, Kanagawa, JP;
Sony Corporation, Tokyo, JP;
Abstract
A CCD imager includes a large number of light receiving sections each having in turn a semiconductor surface region of a second conductivity type, a first semiconductor region of a first conductivity type, a semiconductor region of the second conductivity type and a second semiconductor region of the first conductivity type, vertically. The second semiconductor region is formed by a dual structure of the low concentration semiconductor region and the high concentration semiconductor region. The dual structure provides for shuttering at a lower voltage since the potential barrier along the depth of the light receiving section is no longer affected by the amount of the stored charges, while spreading of the depletion layer at the junction is suppressed by the high concentration semiconductor region.