The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 07, 1991
Filed:
May. 31, 1990
Masayuki Hata, Hyogo, JP;
Tsunenori Umeki, Hyogo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A complementary IC device comprises: an n-semiconductor substrate; a p-well formed within the n-substrate: a n-channel FET (field effect transistor) formed on the p-well, the n-channel FET including an n-source connected to a first grounded line and an n-drain connected to an output line; a p-channel FET formed on the n-substrate, the p-channel FET including a p-source connected to a first voltage source line and a p-drain connected to the output line; a contact p-region formed on the p-well for providing electrical connection between the p-well and a second grounded line; and a contact n-region formed on the n-substrate for providing electrical connection between the n-substrate and a second voltage source line.