The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 07, 1991
Filed:
Apr. 01, 1982
Michael S Adler, Schenectady, NY (US);
General Electric Company, Schenectady, NY (US);
Abstract
MOSFET-gated bipolar transistor and thyristor integrated devices combining, as the respective turn-on and turn-off control devices, an enhancement mode MOSFET and a depletion mode MOSFET. The gates of the two MOSFETs are connected to a single device gate terminal. The conduction channel of the depletion mode MOSFET is preferably an implanted region. With gate voltage of appropriate polarity applied, the depletion mode MOSFET is non-conducting and the enhancement mode MOSFET is conducting, biasing the included bipolar transistor or thyristor into conduction. With zero gate voltage applied, the depletion mode MOSFET conducts and the enhancement mode MOSFET is non-conducting, turning off the included bipolar transistor or thyristor. Significantly, only a single polarity gate input signal is required.