The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 07, 1991
Filed:
Mar. 24, 1989
Applicant:
Inventors:
John E Epler, Cupertino, CA (US);
Thomas L Paoli, Los Altos, CA (US);
Assignee:
Xerox Corporation, Stamford, CT (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437129 ; 148D / ; 148D / ; 148D / ; 148D / ; 437 26 ; 437110 ; 437133 ; 437160 ; 437935 ; 437987 ;
Abstract
In situ removal of selected or patterned portions of semiconductor layers is accomplished by induced evaporation enhancement to form patterned buried impurity layers in semiconductor devices, such as heterostructure lasers and array lasers, which function as buried impurity induced layer disordering (BIILD) sources upon subsequent annealing. These layers may be formed to either function as buried impurity induced layer disordering (BIILD) sources or function as a reverse bias junction configuration of confining current to the active region of a laser structure. Their discussion here is limited to the first mentioned function.