The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 07, 1991
Filed:
Sep. 29, 1989
David J Godbey, Bethesda, MD (US);
Harold L Hughes, West River, MD (US);
Francis J Kub, Severna Park, MD (US);
The United States of America as represented by the Secretary of the Navy, Washington, DC (US);
Abstract
A process for fabricating thin film silicon wafers using a novel etch stop composed of a silicon-germanium alloy includes properly doping a prime silicon wafer for the desired application, growing a strained Si.sub.1-x Fe.sub.x alloy layer onto seed wafer to serve as an etch stop, growing a silicon layer on the strained alloy layer with a desired thickness to form the active device region, oxidizing the prime wafer and a test wafer, bonding the oxide surfaces of the test and prime wafers, machining the backside of the prime wafer and selectively etching the same to remove the silicon, removing the strained alloy layer by a non-selective etch, thereby leaving the device region silicon layer. In an alternate embodiment, the process includes implanting germanium, tin or lead ions to form the strained etch stop layer.