The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 07, 1991
Filed:
Jun. 18, 1990
Applicant:
Inventor:
Hiroki Hozumi, Kanagawa, JP;
Assignee:
Sony Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 47 ; 437 46 ; 437 60 ; 437 31 ; 437917 ; 437918 ; 437162 ;
Abstract
A method for the manufacture of a semiconductor device, comprising the steps of forming ohmic contact portions at the same time, then forming a semiconductor layer on the entire surface including the open portions, and selectively introducing impurities by ion implantation into the contact portions of the semiconductor layer and isolated other element regions, thereby producing a transistor and other elements. This method results in the simultaneous production of a transistor and other elements and simplifies the steps of the process of manufacture.