The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 30, 1991
Filed:
Mar. 30, 1990
Herb Goronkin, Scottsdale, AZ (US);
Motorola, Inc., Schaumburg, IL (US);
Abstract
An enhanced conductivity superlattice structure is provided in which a phonon generator embedded in a quantum well promotes formation of paired electrons. The superlattice structure provides electrons confined in a narrow energy gap material which is sandwiched between two barrier layers made of larger bandgap material. The electrons are provided to the quantum well by doping material in the barrier layers to provide modulation doping of the qnantum well. The quantum well contains at least one monolayer of another material within its boundaries which is a source of phonons which are generated for the purpose of electron-phonon coupling in order to cause electron pairing. In a preferred embodiment a plurality of phonon generator monolayers will be provided in the center of a quantum well, wherein the phonon generator monolayers are separated from each other by a few monolayers of quantum well material to provide increased number of phonons and therefore increased number of electron-phonon interactions.