The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 23, 1991
Filed:
Jul. 20, 1989
Fuji Electric Co., Ltd., Kawasaki, JP;
Abstract
In a gate turn-off thyristor having a plurality of gate turn-off thyristor segments, each having a four-layer upon pnpn structure, a resistance layer is interposed between the emitter layer and the cathode electrode of each segment. A voltage drop occurs across the resistance layer and this voltage drop prevents a current concentration to a specific segment especially at the last stage of a turn-off process, so that the current flows in the respective remaining segments is improved. The voltage drop has a function of shunting the anode current so that the shunted current flows into the gate. Accordingly, the currents flowing through the respective segments and the turn-off times of the respective segments are intended to be made uniform. Therefore, the controllable on-state current can be considerably increased.