The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 23, 1991

Filed:

Dec. 26, 1989
Applicant:
Inventors:

William G Hawkins, Webster, NY (US);

Cathie J Burke, Rochester, NY (US);

Daniel O Roll, Fishers, NY (US);

Pamela J Hartman, Hilton, NY (US);

Diane Atkinson, Marion, NY (US);

Assignee:

Xerox Corporation, Stamford, CT (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B41J / ; H01L / ;
U.S. Cl.
CPC ...
3461 / ; 346 75 ;
Abstract

An improved ink jet printhead is disclosed of the type having a plurality of parallel ink flow channels which terminate with an ink droplet emitting nozzle, a heating element with a cavitational protective layer thereover located in each channel, and MOS electronic circuitry monolithically integrated within the printhead for applying electrical pulses to the heating elements. The pulsed heating elements produce bubbles momentarily on the protective layer of the heating elements which expel ink droplets from the nozzles. The improvement is obtained by providing multi-layer ionic passivation of the MOS electronic circuitry which is exposable to the ink. This is accomplished through the deposition of a multi-layered, thin film insulative coating thereon consisting of a first layer of doped or undoped silicon dioxide having a thickness of 200 .ANG. to 2 .mu.m followed by a second layer of plasma nitride having a thickness of 1000 .ANG. to 3 .mu.m. The silicon nitride is etched from the protective layers of the heating elements and electrical contact pads for external connection to electrical power so that the first layer of silicon oxide is exposed, followed by etching of the silicon oxide to remove it from the protective layer and contact pads. Thus, the MOS circuitry is protected from mobile ions in the ink while the cost effective fabrication of a printhead is maintained. In an alternate embodiment, the multi-layered ionic passivation comprises three thin film layers comprising polyimide interfacing with the ink, followed by silicon nitride, and doped or undoped silicon dioxide directly interfacing with the metallization.


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