The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 23, 1991
Filed:
May. 15, 1989
San-Mei Ku, Poughkeepsie, NY (US);
Kathleen A Perry, Woodland Hills, CA (US);
Other;
Abstract
A method of forming semiconductor device contacts includes the steps of: providing a semiconductor substrate having at least two features thereon whereat it is desired to make electrical connections; forming a layer of etch stop material having a first etch characteristic over each of the features; forming a layer of dielectric material having a second etch characteristic over each of the features; simultaneously etching at least two vias through the layer of dielectric material using an etchant selective to the layer of dielectric material so as to substantially stop on the layer of etch stop material, the at least two vias including a via over each of the features; and extending the vias through the layer of etch stop material so as to expose the features for subsequent electrical connections.