The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 16, 1991

Filed:

Sep. 18, 1989
Applicant:
Inventors:

Genshiro Kawachi, Hitachi, JP;

Akio Mimura, Katsuta, JP;

Nobutake Konishi, Hitachiota, JP;

Kikuo Ono, Hitachi, JP;

Takashi Suzuki, Hitachi, JP;

Assignee:

Hitachi, Ltd., Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437201 ; 437200 ; 437228 ; 148D / ; 148D / ;
Abstract

A method for fabricating an active matrix substrate is disclosed which includes the following steps: forming an island region of a first semiconductor film on a prescribed insulating substrate; forming a first insulating film and a second semiconductor film on said first insulating film; forming a second insulating film on said second semiconductor film and thereafter forming a prescribed pattern of the second insulating film; depositing prescribed metal on the pattern and thereafter forming a compound of the second semiconductor film and the metal; removing unreacted portion of the metal; and etching said second semiconductor film and said first insulating film using said compound as a mask.


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