The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 16, 1991
Filed:
Jan. 10, 1990
Applicant:
Inventors:
Johannes A Appels, Eindhoven, NL;
Henricus G Maas, Eindhoven, NL;
Assignee:
U.S. Philips Corporation, New York, NY (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 31 ; 437 44 ; 437162 ; 437239 ; 437956 ; 437968 ; 148D / ;
Abstract
A method of manufacturing a semiconductor device is set forth using anisotropic etching techniques, such as plasma etching and reactive ion etching to obtain interconnection patterns having accurately defined rims. Various different kinds of transistors can be manufacturing in the same semiconductor body using these techniques.
Appels, Johannes. (1991). Method of manufacturing a semiconductor device including outdiffusion (U.S. Patent No. 5008209). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5008209
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile