The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 16, 1991
Filed:
Jan. 26, 1990
Seiji Mizuniwa, Hitachi, JP;
Akio Hattori, Hitachi, JP;
Tooru Kurihara, Hitachi, JP;
Seigi Aoyama, Kita-Ibaraki, JP;
Konichi Nakamura, Hitachi, JP;
Hitachi Cable Limited, Tokyo, JP;
Abstract
A method of fabricating an undoped or impurity-doped semi-insulating GaAs single crystal with the use of a silica boat comprises the steps of making a melt of GaAs in the silica boat except for a seed crystal, doping the melt with oxygen, maintaining the doped melt as it is for a predetermined period of time, solidifying the melt from the side opposite the seed crystal toward the seed crystal, seeding the melt when the melt attains a predetermined melt zone width on the seed crystal side, and moving the melt zone in the direction opposite the seed crystal for its solidification while keeping the melt zone width unchanged.