Transistor device with high density contacts

Abstract

A transistor device has a gate centered in an active region in which the gate does not extend beyond the active region. The active region has stem portion for the gate and a branch portion extending from each side of the stem portion for the formation of contacts. Raised polysilicon contacts are formed in the branch portions simultaneously with the gate being formed by selective polysilicon deposition. A source and drain are formed on sides of the gates while simultaneously doping the raised polysilicon contacts and the gate. A conformal insulator is etched to form holes to the raised contacts and the gate. These holes, even if over source and drain, do not penetrate to the source or drain because of the raised nature of the polysilicon contacts. Thus, the holes are filled with conductive material to form contacts over source and/or drain which do not contact source/drain. Thus there is no short from gate to source/drain even though the contact to gate is made over the active region. The gate, then, does not need to extend beyond the active region to provide for a metal contact thereto.