The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 09, 1991
Filed:
Jun. 01, 1990
Nobuo Koide, Tokyo, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
A semiconductor integrated circuit includes a differential transistor circuit having first and second FETs which each include a drain, a source and a gate and whose sources are connected to each other. The differential transistor circuit of the semiconductor integrated circuit includes a plurality of first divided drain regions and second divided drain regions of the same number as that of the first divided drain regions, the first and second divided drain regions being alternately arranged at a regular interval and respectively serving as the drains of the first and second FETs, a plurality of divided source regions each arranged between an adjacent two of the first and second divided drain regions and serving as the sources of the first and second FETs, a plurality of first divided gate electrodes arranged between the first divided drain regions and the divided source regions and serving as the gate of the first FET, and a plurality of second divided gate electrodes arranged between the second divided drain regions and the divided source regions and serving as the gate of the second FET.