The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 09, 1991
Filed:
Nov. 25, 1988
Applicant:
Inventor:
Joseph E Farb, Riverside, CA (US);
Assignee:
Hughes Aircraft Company, Los Angeles, CA (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 34 ; 437 29 ; 437 44 ; 437 30 ; 148D / ;
Abstract
A process for forming MOS devices having graded source and drain regions. The source and drain regions are lightly doped by ion implantation and then subjected to thermal cycling to diffuse the implanted impurities. The source and drain regions are then heavily doped to form source and drain regions having a heavily doped subregion and a lightly doped subregion. Devices made pursuant to the process, which can be made less than one-half micron, are not subject to gate oxide charging and have high snapback voltages.