The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 02, 1991

Filed:

Jun. 08, 1989
Applicant:
Inventors:

Toru Fukushima, Yokohama, JP;

Tsunehisa Takabayashi, Yokohama, JP;

Mikio Ogai, Yokohama, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S / ;
U.S. Cl.
CPC ...
372 46 ; 372 45 ; 357 16 ; 357 17 ;
Abstract

A semiconductor device having a current blocking layer and confinement current passing part formed on a semiconductor layer, and an electrode metal layer disposed on said current blocking layer and confinement current passing part, wherein the current blocking layer is made of semiconductor material, and the contact resistance of current blocking layer and electrode metal layer is higher than the contact resistance of electrode metal layer and semiconductor layer, and/or the resistivity of the current blocking layer is higher than that of the semiconductor layer.


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