The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 26, 1991
Filed:
Sep. 13, 1989
Applicant:
Inventors:
Edward T Lewis, Sudbury, MA (US);
Dale L Montrone, Londonderry, NH (US);
Assignee:
Raytheon Company, Lexington, MA (US);
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 56 ; 437 45 ; 437178 ; 437912 ;
Abstract
A semiconductor device referred to as complementary metal electrode semiconductor (CMES) has p-type and n-type silicon MESFETs interconnected on a substrate with an n-type barrier enhancement implanted into the p-channel of the p-type MESFET. The structure and method of fabrication are provided for forming a CMES logic inverter which has characteristics of very low power, low voltage, low noise and high speed.