The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 26, 1991
Filed:
Nov. 22, 1989
Applicant:
Inventors:
Lee M Loewenstein, Plano, TX (US);
Douglas A Webb, Allen, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Primary Examiner:
Int. Cl.
CPC ...
B44C / ; C23F / ; C03C / ; C03C / ;
U.S. Cl.
CPC ...
156643 ; 156646 ; 156656 ; 1566591 ; 156345 ; 20419235 ; 252 791 ; 437245 ;
Abstract
An apparatus and method for the etching of semiconductor materials (14) is disclosed. The apparatus (10) includes a process chamber (12) having a remote generator (16) in fluid communication with the process chamber (12) for converting a noble gas (34) to a metastable gas (36). An etchant gas (40) is subsequently brought into the chamber (12) adjacent to the material (14), to mix and react with the metastable gas (36) at activation zone (38). The metastable gas (36) collides with the etchant gas (40) to cause the mixture to selectively etch the material 14.
Published as: