The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 26, 1991
Filed:
Mar. 09, 1990
Konstantinos P Giapis, Maplewood, NJ (US);
Richard A Gottscho, Maplewood, NJ (US);
Geoffrey R Scheller, Allentown, PA (US);
AT&T Bell Laboratories, Murray Hill, NJ (US);
Abstract
Reactive ion plasma etching apparatus and method are based upon the discovery of enhanced uniformity of etching at low workpiece temperatures. With cooling to sufficiently low temperatures, spontaneous etching is inhibited and etching uniformity is controlled not by gas flow and pressure but rather by ion flux. As a result, one can eliminate uniformity enhancing apparatus which heretofore obstructed optical access to the workpiece, provide window means permitting optical access to a major portion of the workpiece and employ sophisticated optical monitoring techniques during the etching process.