The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 19, 1991
Filed:
Sep. 06, 1989
Michael D Petroff, Fullerton, CA (US);
Rockwell International Corporation, El Segundo, CA (US);
Abstract
An impurity band conduction (IBC) infrared detector is provided with a photoluminescent (PL) layer proximate the blocking layer of the device. The PL layer comprises a narrow band-gap semiconductor material selected for generating long wavelength infrared (LWIR) photoluminescent photons in response to incident photons of selected spectra. The PL layer improves the quantum efficiency of IBC devices in detecting incident photons in the short wavelength infrared (SWIR), ultraviolet (UV), and X-ray spectra. The thickness of the PL layer can be varied to optimize the photoluminescent response to incident photons of a selected spectrum. In a back-illuminated detector array, absorption of a SWIR photon in the PL layer results in one or more LWIR photons emitted in a time that is sufficiently shorter than the multiplexer frame time. The PL layer should be several times thicker than the absorption length of the SWIR photon, and the luminescent photons should not be reabsorbed by the PL layer or strongly reflected by the interface with the blocking layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile