The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 19, 1991
Filed:
Aug. 13, 1990
Takashi Hosaka, Tokyo, JP;
Seiko Instruments Inc., , JP;
Abstract
In the step of forming a thin insulation film with the thickness of less than 1,000 .ANG. on the polycide electrode and wiring after formiung the polycide electrode and wiring, a semiconductor device having preferable insulation performance and high reliability is formed by using a silicon oxide film (SiO.sub.2) formed by a chemical vapor deposition process using a dichlorosilane (SiH.sub.2 Cl.sub.2) gas and a nitrous oxide (N.sub.2 O) gas under a reduced pressure of from 0.1 mbar to 2 mbar and at a temperature from 700.degree. C. to 950.degree. C. as the insulation film.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile