The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 19, 1991
Filed:
Nov. 21, 1988
Kosei Takahashi, Nara, JP;
Toshiro Hayakawa, Yokohama, JP;
Takahiro Suyama, Tenri, JP;
Masafumi Kondo, Nara, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
An optical semiconductor device is disclosed that comprises a quantum-well structure as an active region and exhibits a nonlinear optical effect with regard to light of energy near the band gap between the allowed band edges in the active region. The quantum-well structure of this device is composed of alternate layers consisting of at least one first semiconductor layer with a thickness smaller than the de Broglie wavelength of carriers and at least two second semiconductor layers with a band gap greater than that of the first semiconductor layer, the alternate layers being formed along a crystal orientation in the zinc-blende structure. The second semiconductor layers mentioned above are of an indirect transition type.