The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 19, 1991
Filed:
Mar. 10, 1989
Ikuo Ogoh, Hyogo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A method of forming a resist pattern on a main surface of a semiconductor substrate comprising the steps of exposing a resist to light and developing it to become a predetermined pattern, curing the surface of the resist pattern formed by the exposing and developing treatments by irradiating the surface with far ultraviolet rays having a short wavelength, and baking the resist pattern subjected to a light irradiation treatment. The light irradiation treatment is performed by irradiating the surface of the resist pattern, which is not shaded from light with the far ultraviolet rays, in a state in which a resist pattern region formed on a peripheral portion of the semiconductor substrate is shaded from light. As a result, a crack can be prevented from forming on the resist of the peripheral portion of the semiconductor substrate. A light irradiation apparatus used in the light irradiation treatment comprises shading means for selectively intercepting the irradiation light. The shading means prevent light irradiation onto the resist pattern of the peripheral portion of the semiconductor substrate.