The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 12, 1991
Filed:
Aug. 13, 1990
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
A semiconductor memory having a plurality of memory cells each including a single capacitor and a single transistor for storing one bit are formed on a semiconductor substrate. Each terminal of the respective transistors of the memory cells are commonly connected to a common wiring portion, and the capacitor of each memory cell is disposed in a trench which is formed by forming a groove-like shape along the outer periphery of the semiconductor substrate for one or two adjacent transistors. The capacitor includes a first insulating film disposed over the inner wall surface of the trench, a first electrode formed entirely or partially on the surface of the first insulating film for being supplied with a predetermined voltage, a second insulating film disposed entirely over the surface of the first electrode, and a second electrode disposed on the second insulating film in an area corresponding to the inner sidewall surface of the trench and connected to the other terminal of the transistor.