The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 12, 1991
Filed:
Dec. 08, 1989
Applicant:
Inventors:
Sang H Dhong, Mahopac, NY (US);
Chih-Liang Chen, Briarcliff Manor, NY (US);
Hyun J Shin, Mahopac, NY (US);
Assignee:
International Business Machines Corp., Armonk, NY (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K / ;
U.S. Cl.
CPC ...
307446 ; 307443 ; 3073031 ; 307570 ; 357 43 ;
Abstract
Circuitry for implementing a gate enhanced lateral transistor to provide a circuit having a bipolar current driving capability and an FET channel voltage drop. The circuits provide switching of the lateral transistor by enabling both gate and base connections. The device is merged into an FET providing essentially no voltage drop across the collector-emitter connections permitting the collector to reach a full power supply voltage.