The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 12, 1991
Filed:
Apr. 04, 1989
Applicant:
Inventors:
Didier Pribat, Paris, FR;
Leonidas Karapiperis, Bourg-la-Reine, FR;
Assignee:
Thomson-CSF, Puteaux, FR;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 89 ; 148D / ; 148D / ; 156613 ; 437 69 ; 437 80 ; 437 81 ; 437 83 ; 437 99 ; 437976 ;
Abstract
In a method for the fabrication of a layer of a monocrystalline semiconducting layer on a layer of insulating material, an epitaxial growth is achieved in a cavity closed by layers of dielectric material, using a seed of monocrystalline semiconducting material of a substrate. The growth takes place first of all, vertically, perpendicularly to the seed, and then horizontally in the plane of the cavity. This method thus enables a three-dimensional integration of semiconductor components.