The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 26, 1991
Filed:
Oct. 30, 1989
Applicant:
Inventor:
Renwin J Yee, Mesa, AZ (US);
Assignee:
Motorola, Inc., Schaumburg, IL (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C25F / ; C25F / ;
U.S. Cl.
CPC ...
2041293 ; 20412975 ;
Abstract
A semiconductor membrane is fabricated in a substrate by applying a voltage to a Schottky diode or a capacitor formed on a surface of the substrate to create a depletion region in the substrate. The substrate is exposed to an electrochemical, anisotropic etch solution. Etching terminates at the depletion region, thus forming a membrane having a thickness defined by the thickness of the depletion region.