The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 19, 1991
Filed:
Mar. 29, 1988
Minoru Kato, Nagoya, JP;
Junichi Miwa, Yokohama, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
In the gate-controlled bi-directional semiconductor switching device, when a negative trigger signal is applied to a second electrode functioning as a gate electrode, a second auxiliary thyristor formed of the sixth, third, first and eighth conductive layers is turned on, causing an ON current to be supplied as a gate current to a main thyristor formed of the fifth, second, first and eighth conductive layers via the first wiring. When a positive trigger signal is applied to the second electrode, a first auxiliary thyristor formed of the seventh, fourth, first and eighth conductive layers is turned on, causing an ON current to be supplied as a gate current to the main thyristor via the second wiring. Since the second electrode is connected to the fourth and sixth conductive layers of the first and second auxiliary thyristors are formed separately from the third and seventh conductive layers, invalid current components in the first and second thyristors are reduced to a minimum. This enhances the gate sensitivity particularly in operation modes I and II.