The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 19, 1991
Filed:
Feb. 10, 1989
Karl Hess, Urbana, IL (US);
James J Coleman, Champaign, IL (US);
Ted K Higman, Champaign, IL (US);
Mark A Emanuel, Champaign, IL (US);
University of Illinois, Urbana, IL (US);
Abstract
A semiconductor heterostructure device is disclosed which includes a first semiconductor layer having a barrier layer disposed thereon, the barrier layer being formed of a semiconductor material having a wider bandgap than the material of the first semiconductor layer. A carrier transport layer is disposed on the barrier layer, the carrier transport layer being formed of a semiconductor material having a narrower bandgap than the material of the barrier layer. A contact layer is disposed on the carrier transport layer. A negative potential is applied to the contact layer with respect to the first semiconductor layer. In operation, for small voltages, under the indicated bias configuration, electrons supplied to the carrier transport layer by the source of negative potential supply will be blocked at the barrier presented by the larger bandgap barrier layer, and little current will flow. As the bias voltage is increased, these blocked electrons are under the influence of
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