The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 19, 1991
Filed:
Aug. 02, 1990
Shinobu Aoki, Kariya, JP;
Haruo Takagi, Kariya, JP;
Hiroshi Tadano, Nagoya, JP;
Takashi Suzuki, Aichi, JP;
Susumu Sugiyama, Nagoya, JP;
Kabushiki Kaisha Toyoda Jidoshokki Seisakusho, Kariya, JP;
Kabushiki Kaisha Toyota Chuo Kenkyusho, Aichi, JP;
Abstract
A static induction type semiconductor device is used as a power transistor. It is of the surface gate type and is used for providing a high current density. The static induction type semiconductor device provides a plurality of small source regions surrounded by a gate region. According to this structure, the channel region beneath the source region becomes small, thereby increasing the stored carrier density and enabling a large main current to flow when using a small gate current, thereby achieving a high current amplification ratio. Further, when it flows the main current is distributed to the source regions, thus preventing increase in on-voltage.