The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 19, 1991
Filed:
Nov. 03, 1989
Applicant:
Inventors:
Barbara Vasquez, Chandler, AZ (US);
Peter J Zoebel, Mesa, AZ (US);
Assignee:
Motorola Inc., Schaumburg, IL (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 67 ; 156644 ; 156649 ;
Abstract
A method of fabricating a semiconductor structure includes forming a thermal oxide layer, a polysilicon layer and a first dielectric layer on a substrate and using a mask to form at least one opening therein. Dielectric spacers are then formed in the opening and a trench having a self-aligned reduction in width due to the dielectric spacers is etched into the substrate beneath the opening. A dielectric trench liner is then formed prior to filling the trench with polysilicon. A second mask is then used to form isolation element openings in the first dielectric layer in which shallow isolation elements are formed.