The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 19, 1991
Filed:
Apr. 02, 1990
Sang B Kim, Daejon, KR;
Electronics and Telecommunications Research Institute, Daejeon, KR;
Korea Telecommunication Authority, Seoul, KR;
Abstract
A method for manufacturing a buried heterostructure laser diode comprising an active layer and a clad layer which are formed as a reverse mesa on a substrate, current blocking layers and an insulation layer deposited on the top of the blocking layers, and an electrode formed on the top thereof comprising: a first step for forming a SiO.sub.2 stripe mask on the clad layer after a first liquid phase epitaxial growth of the active layer and the clad layer on the substrate, a second step for etching the clad layer under the SiO.sub.2 stripe mask using an etchant to form a reverse mesa structure, a third step for selectively etching the clad layer using an etchant such as a family of hydrochloric acid and then for making the active layer protrude, and a fourth step for naturally melthig back the protruded porting of the active layer surface during the second epitaxial growth process is provided.