The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 12, 1991

Filed:

Nov. 15, 1989
Applicant:
Inventors:

Soichiro Okuda, Amagasaki, JP;

Shigeo Sasaki, Amagasaki, JP;

Kazuo Yoshida, Amagasaki, JP;

Yoshio Yamane, Amagasaki, JP;

Fumiharu Yabunaka, Amagasaki, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01N / ;
U.S. Cl.
CPC ...
324 713 ; 324 711 ;
Abstract

A charged-particle distribution measuring apparatus includes a particle passing member having a plurality of through-holes through which portions of a beam of charged particles can pass, a particle trapping member for trapping charged particles that have passed through the through-holes, a recoil particle trapping member disposed between the particle passing member and the particle trapping member, and a mechanism for moving the members to measure the spatial distribution of the charged particle beam. Preferably, the through-holes in the particle passing member are uniformly distributed in a checkerboard pattern. The movement of the members permits measurement of the currents produced by the charged particle beam at various intervals between the locations of the through-holes at the beginning of the measurement. The measurement of the charged particle beam intensity at positions across through the beam, rather than at fixed locations within the beam, improves the resolution of the measured distribution. The apparatus can be employed with positively and negatively charged beams and is useful in ion implantation.


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